# Schottky Rectifier, 40 V, 1 A, Single, MELF, 600 mV

![Product image](https://novapart.co/image/farnell:4332870/)

**URL**: https://novapart.co/products/LL5819%20L0G/schottky-rectifier-40-v-1-a-single-melf-600-mv
**SKU**: LL5819 L0G
**Manufacturer**: TAIWAN SEMICONDUCTOR
**Category**: Semiconductors - Discretes || Diodes & Rectifiers || Schottky Diodes || Schottky Rectifier Diodes
**Price**: €0.1440
**Stock**: 10+

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (27-Jun-2018) |
| No. Of Pins | - |
| Product Range | LL581x Series |
| Qualification | - |
| Diode Mounting | Surface Mount |
| Diode Case Style | MELF |
| Diode Configuration | Single |
| Forward Voltage Max | 600mV |
| Forward Surge Current | 25A |
| Average Forward Current | 1A |
| Operating Temperature Max | 125°C |
| Repetitive Peak Reverse Voltage | 40V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:4332870/)

S SEMICONDUCTOR Sapeeeennnnn **LL5817 – LL5819** Taiwan Semiconductor 

## **1A, 20 - 40V Schottky Barrier Surface Mount Rectifier** 

## FEATURES 

- Plastic package has carries underwriters 

- Ideal for automated placement 

- Surge overload rating to 25A peak 

- Reliable low cost construction utilizing molded 

- RoHS Compliant 

- Halogen-free according to IEC 61249-2-21 

## APPLICATIONS 

- Inverters 

- Converters 

|KEY PARAMETERS|KEY PARAMETERS|KEY PARAMETERS|
|---|---|---|
|PARAMETER|VALUE|UNIT|
|IF|1|A|
|VRRM|20 - 40|V|
|IFSM|25|A|
|TJ MAX|125|°C|
|Package|MELF||



**==> picture [129 x 33] intentionally omitted <==**

**----- Start of picture text -----**<br>
(Pd) ROHS HALOGEN<br>— —sCOMPLIANT FREE<br>**----- End of picture text -----**<br>


- Adapters 

## MECHANICAL DATA 

- Case: MELF 

- Meet JESD 201 class 1A whisker test 

- Polarity: Indicated by cathode band 

- Weight: 120.00mg (approximately) 

## **MELF** 

|ABSOLUTE MAXIMUM RATINGS (TA= 25°C unless otherwise noted)|ABSOLUTE MAXIMUM RATINGS (TA= 25°C unless otherwise noted)|ABSOLUTE MAXIMUM RATINGS (TA= 25°C unless otherwise noted)|ABSOLUTE MAXIMUM RATINGS (TA= 25°C unless otherwise noted)|ABSOLUTE MAXIMUM RATINGS (TA= 25°C unless otherwise noted)|ABSOLUTE MAXIMUM RATINGS (TA= 25°C unless otherwise noted)|
|---|---|---|---|---|---|
|PARAMETER|SYMBOL|LL5817|LL5818|LL5819|UNIT|
|Repetitive peak reverse voltage|VRRM|20|30|40|V|
|Reverse voltage, total rms value|VR(RMS)|14|21|28|V|
|DC blocking voltage|VDC|20|30|40|V|
|Forward current|IF|1|||A|
|Surge peak forward current 8.3ms<br>single half sine-wave<br>superimposed on ratedload|IFSM|25|||A|
|Junction temperature|TJ|-65 to +125|||°C|
|Storage temperature|TSTG|-65 to +125|||°C|



1 Version: H2004 

**LL5817 – LL5819** SEMICONDUCTOR Taiwan Semiconductor $5 ae $a 

THERMAL PERFORMANCE PARAMETER SYMBOL TYP UNIT Junction-to-Ambient thermal resistance RӨJA 80 °C/W 

ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) ~~ee~~ PARAMETER CONDITIONS SYMBOL TYP MAX UNIT IF = 1.0A - 0.450 LL5817 IF = 3.0A - 0.750 ~~a ———a a~~ IF = 1.0A - 0.550 Forward voltage[(1)] LL5818 VF V IF = 3.0A - 0.875 ~~| a-_——— a|~~ IF = 1.0A - 0.600 LL5819 IF = 3.0A - 0.900 ~~| -_———~~ ~~**a**~~ Reverse current @ rated VR(2) TJ = 25°C IR - 0.5 mA TJ = 100°C - 5 mA ~~aa a~~ Junction capacitance 1MHz, VR = 4.0V CJ 110 - pF ~~a a~~ **Notes:** 

1. Pulse test with PW = 0.3ms 

2. Pulse test with PW = 30ms 

## ORDERING INFORMATION 

|ORDERING CODE(1)|PACKAGE|PACKING|
|---|---|---|
|LL581x L0G|MELF|5,000/13” reel|



**Notes:** 

1. “x” defines voltage from 20V(LL5817) – 40V(LL5819) 

2 Version: H2004 

% GMDOR E>EE————————————————————————————EE **LL5817 – LL5819** Taiwan Semiconductor 

## CHARACTERISTICS CURVES 

(TA = 25°C unless otherwise noted) 

## **Fig.1 Forward Current Derating Curve** 

**==> picture [209 x 171] intentionally omitted <==**

**----- Start of picture text -----**<br>
1.25<br>1<br>0.75<br>0.5<br>0.25<br>0<br>0 25 50 75 100 125<br>Lead Temperature ( [O] C)<br>Average Forward Current (A)<br>**----- End of picture text -----**<br>


## **Fig.3 Typical Forward Characteristics** 

**==> picture [207 x 379] intentionally omitted <==**

**----- Start of picture text -----**<br>
100<br>10 LL5817<br>ao0e>— 228"<br>LL5818-LL5819<br>+H<br>1<br>ff<br>Pulse Width=300μs<br>1% Duty Cycle<br>0.1<br>0.1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 1.7 1.9 2.1<br>Forward Voltage (V)<br>     Fig.5 Typical Junction Capacitance<br>1000<br>100<br>10 LTTE LEANN LEE<br>0.1 1 10 100<br>Reverse Voltage (V)<br>Instantaneous Forward Current (A)<br>Junction Caoacitance (pF)<br>**----- End of picture text -----**<br>


## **Fig.2 Maximum Non-Repetitive Peak Forward Surge Current** 

**==> picture [214 x 604] intentionally omitted <==**

**----- Start of picture text -----**<br>
30<br>8.3ms Single Half Sine Wave<br>25<br>20 SOCUI LLU<br>15<br>INAH LE<br>10<br>ll<br>5<br>0 Chit<br>1 10 100<br>Number of Cycles at 60HZ<br>      Fig.4 Typical Reverse Characteristics<br>10<br>1 TJ=100 [°] C<br>Oe<br>===<br>0.1 a SS ><br>A<br>TJ=25 [°] C<br>0.01<br>0 20 40 60 80 100 120 140<br>Percent of Rated Peak Reverse Voltage (%)<br>    Fig.6 Typical Transient Thermal Impedance<br>100<br>10<br>1<br>0.1<br>0.01 FHEt<br>0.01 0.1 1 10 100<br>T, Pulse Duration (s)<br>Peak Forward Surge Current (A)<br>Instantaneous Reverse Current (mA)<br>C/W) Transient Termal Impedance (o<br>**----- End of picture text -----**<br>


**Fig.6 Typical Transient Thermal Impedance** 

3 Version: H2004 

**LL5817 – LL5819** a4[—272_____________] Taiwan Semiconductor 

## PACKAGE OUTLINE DIMENSIONS 

## **MELF** 

|||||||||C|||**Unit (mm)**|**Unit (mm)**|**Unit (inch)**|**Unit (inch)**|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|||||||||||**DIM**|||||
||||||||||||**Min**|**Max**|**Min**|**Max**|
||||||||||||||||
|B||||||||||A|4.80|5.50|0.189  0.217|0.189  0.217|
|||||||||||B|2.25|2.67|0.089  0.105|0.089  0.105|
||||||A|||||C|0.30|0.60|0.012  0.024|0.012  0.024|



## SUGGESTED PAD LAYOUT 

|**DIM**|**Unit (mm)**|**Unit (inch)**|
|---|---|---|
||**TYP**|**TYP**|
|C|4.80|0.189|
|G|3.30|0.130|
|X|1.50|0.059|
|X1|6.30|0.248|
|Y|2.70|0.106|



4 Version: H2004 

**LL5817 – LL5819** TAIWANSEMICONDUCTOR(i Taiwan Semiconductor 

## **Notice** 

Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. 

Purchasers are solely responsible for the choice, selection, and use of TSC products and TSC assumes no liability for application assistance or the design of Purchasers’ products. 

Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. 

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 

5 Version: H2004 



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